R6010MNX डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6010MNX FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche tes

R6010MNX 　　Nch 600V 10A Power MOSFET 　　 Datasheet lOutline VDSS 600V r RDS(on)(Max.) 0.380Ω ID ±10A TO-220FM fo PD 56W 　 　　　　　　 d lFeatures e 1) Fast reverse recovery time