डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R601 | General Purpose Rectifier |
Powerex Power Semiconductors |
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R601 | Coil Filters 137
CHIP INDUCTOR
COIL FILTERS
R601/R602/R332/WF1608/WF2012SERIES
COIL FILTERS
R601/R602/R332/WF1608/WF2012SERIES
138
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Okaya |
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R6010ANX | Drive Nch MOSFET Data Sheet
10V Drive Nch MOSFET
R6010ANX
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-sourc |
Rohm |
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R6010MND3 | MOSFET R6010MND3
Nch 600V 10A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS
600V
lOutline
RDS(on)(Max.)
0.380Ω
ID
±10A
TO-252
PD
143W
lFeatures
1) F |
ROHM |
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R6010MNX | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6010MNX
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 380mΩ(Max) ·100% avalanche tes |
INCHANGE |
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R6010MNX | Power MOSFET R6010MNX
Nch 600V 10A Power MOSFET
Datasheet
lOutline
VDSS
600V
r RDS(on)(Max.)
0.380Ω
ID
±10A
TO-220FM
fo PD
56W
d lFeatures e 1) Fast reverse recovery time |
ROHM |
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R6011ENJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6011ENJ
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 390mΩ(Max) ·100% avalanche tes |
INCHANGE |
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