R6009KNX डाटा शीट PDF( Datasheet )

R6009KNX 　　Nch 600V 9A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.535Ω ±9A 48W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; Ro

isc N-Channel MOSFET Transistor R6009KNX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 535mΩ(Max) ·100% avalanche test