R6009JNJ डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor R6009JNJ FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max) ·100% avalanche teste

R6009JNJ 　　Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be sim