डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6009ENX | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6009ENX
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 535mΩ(Max) ·100% avalanche test |
INCHANGE |
|
R6009ENX | Power MOSFET R6009ENX
Nch 600V 9A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.535Ω
ID
±9A
TO-220FM
PD
48W
lFeatures
1) Low on-resistance 2) Fast switchi |
ROHM |
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