डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R6007ENJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R6007ENJ
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 620mΩ(Max) ·100% avalanche test |
INCHANGE |
|
R6007ENJ | Power MOSFET R6007ENJ
Nch 600V 7A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-263S
RDS(on)(Max.)
0.62Ω
SC-83
ID
±7A
LPT(S)
PD
lFeatures
78W
lInner circuit
1) Low on |
ROHM |
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