R6006JNJ डाटा शीट PDF( Datasheet )

R6006JNJ 　　Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.936Ω ±6A 86W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simp

isc N-Channel MOSFET Transistor R6006JNJ FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 936mΩ(Max) ·100% avalanche teste