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R1RP0416DSB-0PI DataSheet

No. Partie # Fabricant Description Fiche Technique
1
R1RP0416DSB-0PI

Renesas
4M High Speed SRAM

• Single 5.0V supply: 5.0V ± 10%
• Access time: 10ns /12ns (max)
• Completely static memory ⎯ No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible ⎯ All inputs and outputs
• Operating current: 170mA / 160mA (max
Datasheet



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