डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PTFA220081M | High Power RF LDMOS Field Effect Transistor PTFA220081M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz
Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifier |
Infineon |
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PTFA220081M | High Power RF LDMOS Field Effect Transistor | Infineon |
www.DataSheet.in | 2017 | संपर्क |