डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PTFA211001E | Thermally-Enhanced High Power RF LDMOS FET PTFA211001E
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz
Description
The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. |
Infineon |
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PTFA211001E | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
www.DataSheet.in | 2017 | संपर्क |