PTF180101 डाटा शीट PDF( Datasheet )

PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE appl

PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE appl