डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PTF080901E | LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full |
Infineon Technologies AG |
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PTF080901E | LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz | Infineon Technologies AG |
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PTF080901 | LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz | Infineon Technologies AG |
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PTF080901F | LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz | Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |