डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96 |
Infineon Technologies AG |
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PTF080601 | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz | Infineon Technologies AG |
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PTF080601E | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz | Infineon Technologies AG |
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PTF080601F | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz | Infineon Technologies AG |
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PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz | Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |