PTF080601 डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
PTF080601	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96	Infineon Technologies AG	PDF
PTF080601A	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96	Infineon Technologies AG	PDF
PTF080601E	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96	Infineon Technologies AG	PDF
PTF080601F	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96	Infineon Technologies AG	PDF

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