डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PTF | Metal Film Resistors www.vishay.com
PTF
Vishay Dale
Metal Film Resistors, Axial, High Precision, High Stability
FEATURES
• Extremely low temperature coefficient of
resistance
• Very low noise and voltage coefficient • V |
Vishay |
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PTF080101 | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon Technologies AG |
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PTF080101S | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon Technologies AG |
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PTF080451 | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full |
Infineon Technologies AG |
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PTF080451E | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full |
Infineon Technologies AG |
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PTF080601 | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96 |
Infineon Technologies AG |
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PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96 |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |