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PTF   Metal Film Resistors

www.vishay.com PTF Vishay Dale Metal Film Resistors, Axial, High Precision, High Stability FEATURES • Extremely low temperature coefficient of resistance • Very low noise and voltage coefficient • V
Vishay
Vishay
PDF
PTF080101   LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ

Infineon Technologies AG
Infineon Technologies AG
PDF
PTF080101S   LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ

Infineon Technologies AG
Infineon Technologies AG
PDF
PTF080451   LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full
Infineon Technologies AG
Infineon Technologies AG
PDF
PTF080451E   LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full
Infineon Technologies AG
Infineon Technologies AG
PDF
PTF080601   LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96
Infineon Technologies AG
Infineon Technologies AG
PDF
PTF080601A   LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 96
Infineon Technologies AG
Infineon Technologies AG
PDF



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