PPM6N20V10 डाटा शीट PDF( Datasheet )

WͲŚĂŶŶĞůůŽǁŽŶͲƌĞƐŝƐƚĂŶĐĞDK^&d PRIMARY CHARACTERISTICS VDS(V) RDS(on)(mΩ) ID(A) -20 14@VGS=-4.5V -10 FEATURES  The enhancement mode MOS is extremely high density cell and l

Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N20V10 P-Channel MOSFET VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 15@ VGS=-4.5V -10 Internal str