| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
Silicon NPN Phototransistor High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx) 12.7 min. 6.3±0.3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) Fast r |
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