PHP30NQ15T डाटा शीट PDF( Datasheet )

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP30NQ15T, PHB30NQ15T FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal

PHP30NQ15T N-channel TrenchMOS standard level FET Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET

isc N-Channel MOSFET Transistor PHP30NQ15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 63mΩ ·Low thermal resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device