डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PHN210 | Dual N-channel enhancement mode TrenchMOS transistor Philips Semiconductors
Product specification
Dual N-channel enhancement mode TrenchMOSTM transistor
FEATURES
• Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface |
NXP |
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PHN210T | Dual N-channel TrenchMOS intermediate level FET PHN210T
Dual N-channel TrenchMOS intermediate level FET
Rev. 02 — 15 December 2010 Product data sheet
1. Product profile
1.1 General description
Dual intermediate level N-channel enhancement mode Field-Effec |
NXP |
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