PE60 डाटा शीट PDF( Datasheet )

www.vishay.com PE60 Vishay Sfernice Power Panel 6 W Potentiometer LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models QUICK REFERENCE DATA Multiple module Switch module Detent module Special electrical laws Sealin

PE6003 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suita

N-Channel Enhancement Mode Power MOSFET Description The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G

PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 32A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

PE600SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

N-Channel Enhancement Mode Power MOSFET PE6018 Description The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applicat