डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PE2012 | N-Channel Enhancement Mode Power MOSFET PE2012
N-Channel Enhancement Mode Power MOSFET
Description
The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device |
semi one |
|
PE2017 | N-Channel Enhancement Mode Power MOSFET | semi one |
|
PE2012 | N-Channel Enhancement Mode Power MOSFET | semi one |
|
PE2010 | CURRENT SENSOR | YAGEO |
www.DataSheet.in | 2017 | संपर्क |