डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
PDB2116M | N+P Dual Channel MOSFETs 20V N+P Dual Channel MOSFETs
PDB2116M
General Description
These N+P dual Channel enhancement mode power
BVDSS RDSON
ID
field effect transistors are using trench DMOS technology. This advanced technology ha |
Potens semiconductor |
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PDB2116S | N+P Dual Channel MOSFETs | Potens semiconductor |
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PDB2116M | N+P Dual Channel MOSFETs | Potens semiconductor |
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