PBSS5160T डाटा शीट PDF( Datasheet )

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in

PBSS5160T Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.  特征 / Features 饱和压降低，电流大。

Production specification PNP Low VCEsat(BISS) Transistor FEATURES z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z

SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) ■ Features ● Low collector-emitter saturation voltage VCEsat ● High collector current capability: IC and ICM ● High efficiency, reduces heat

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in