PBSS4160T डाटा शीट PDF( Datasheet )

Production specification NPN Low VCEsat Transistor FEATURES z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat ge

PBSS4160T Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 饱和压降低，电流大。

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors 60 V, 1 A NPN