P75N06 डाटा शीट PDF( Datasheet )

PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), [email protected],IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low

CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capab