डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
P281 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadca |
Polyfet RF Devices |
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P2811A | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clo |
ON Semiconductor |
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P2811B | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clo |
ON Semiconductor |
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P2812A | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clo |
ON Semiconductor |
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P2812B | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clo |
ON Semiconductor |
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P2814A | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clo |
ON Semiconductor |
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P2814B | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clo |
ON Semiconductor |
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