डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
P20N06 | CEP20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current ha |
CET |
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P20N06 | FQP20N06 Freescale N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical appli |
Freescale |
www.DataSheet.in | 2017 | संपर्क |