डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NVHL080N120SC1 | N-Channel Silicon Carbide MOSFET Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L
NVHL080N120SC1
Features
• Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Co |
ON Semiconductor |
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NVHL080N120SC1 | N-Channel Silicon Carbide MOSFET | ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |