NVD5C668NL डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.9mΩ(Max) @ VGS= 10V ·100% avalanche test

NVD5C668NL Power MOSFET 60 V, 8.9 mW, 49 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capa