NVD5C648NL डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor NVD5C648NL FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage- VDSS= 60V(Min) ·Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max) ·100% avalanche tested

NVD5C648NL MOSFET – Power, Single N-Channel 60 V, 4.1 mW, 89 A Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP C