NTE63 डाटा शीट PDF( Datasheet )

NTE63 Silicon NPN Transistor High Gain, Low Noise Amp Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amp

NTE629 & NTE630 Silicon Rectifier Fast Recovery, Dual, Center Tap Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as

NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to

NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to

NTE637 Schottky Barrier Diode (Surface Mount) Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . .