NTE59 डाटा शीट PDF( Datasheet )

NTE58 (NPN) & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specif

NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designe

NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode�

NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode�

NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designe

NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode, 20 Amp Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4

NTE592 Silicon Diode, General Purpose, High Voltage Description: The NTE592 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for switching and general