डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE553 | Schottky Barrier Diode NTE553 Schottky Barrier Diode
Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless oth |
NTE |
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NTE5531 | Silicon Controlled Rectifier NTE5520 thru NTE5531
Silicon Controlled Rectifier (SCR), 25A
Maximum Ratings and Characteristics: Blocking State (TJ = +125°C unless otherwise specified) Repetitive Peak Forward and Reverse Voltage, VDRM, VRRM |
NTE |
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NTE5536 | Silicon Controlled Rectifier NTE5536 Silicon Controlled Rectifier (SCR)
Description: The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as back–to–back SCR output devices for solid state relays |
NTE |
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NTE5538 | Silicon Controlled Rectifier NTE5538 Silicon Controlled Rectifier (SCR) 800VDRM, 50A
Description: The NTE5538 general purpose SCR is suited for power supplies up to 400HZ on resistive or inductive loads. Features: D Glass Passivated Chip D |
NTE |
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NTE5539 | Silicon Controlled Rectifier NTE5539 & NTE5540 Silicon Controlled Rectifier (SCR) 55 Amps
Features: D High Voltage Capability D High Surge Capability D Glass Passivated Chip Electrical Characteristics: (TA = +25°C, 60Hz, Resistive load un |
NTE |
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