NTE47 डाटा शीट PDF( Datasheet )

NTE47 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz

NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–o

NTE472 Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile m

NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment.

NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Max

NTE476 Silicon NPN Transistor RF Power Output Description: The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode design. This feature together with a heavily diffus