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NTE332 | Silicon Complementary Transistors NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 p |
NTE |
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NTE3320 | Insulated Gate Bipolar Transistor NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Swi |
NTE |
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NTE3321 | Insulated Gate Bipolar Transistor NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Swi |
NTE |
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NTE3322 | Insulated Gate Bipolar Transistor NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Swi |
NTE |
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NTE3323 | Insulated Gate Bipolar Transistor NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Swi |
NTE |
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