डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE3301 | Insulated Gate Bipolar Transistor NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power |
NTE |
|
NTE3303 | Insulated Gate Bipolar Transistor | NTE |
|
NTE3302 | Insulated Gate Bipolar Transistor | NTE |
|
NTE3300 | Insulated Gate Bipolar Transistor | NTE |
|
NTE3301 | Insulated Gate Bipolar Transistor | NTE |
|
NTE330 | Germanium PNP Transistor | NTE |
www.DataSheet.in | 2017 | संपर्क |