NTE330 डाटा शीट PDF( Datasheet )

NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance i

NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power

NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power

NTE3302 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Swi

NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Swi