NTE312 डाटा शीट PDF( Datasheet )

NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Feature

NTE3120 Silicon NPN Phototransistor Detector Features: D High Sensitivity D GaAs LED–Wide Spectral Range, with GaAs LED. D Low Dark Current D Side–View Plastic Package Absolute Maximum Ratings: (TA = +25°C

NTE3122 Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Narrow Acceptance: ∆q = ±13° Typ D High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2 D

NTE3123 Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Compact D Intermediate Acceptance: ∆q = ±40° Typ D Visible Light Cut–Off Applic