डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE308 | Integrated Thyristor/Rectifier NTE308 Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch
Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . |
NTE |
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NTE3080 | (NTE30xx) LED Displays w
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NTE Electronics |
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NTE3081 | Optoisolator NTE3081 Optoisolator NPN Transistor Output
Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing |
NTE |
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NTE3082 | Optoisolator NTE3082 Optoisolator NPN Darlington Transistor Output
Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic |
NTE |
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NTE3083 | Optoisolator NTE3083 Optoisolator NPN Darlington Transistor Output
Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type packa |
NTE |
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NTE3084 | Optoisolater NTE3084 Optoisolater NPN Photo Darlington Output
Features: D High Isolation Voltage–7500V Electrical Characteristics: (TA = +25°C unless otherwise specified) Minimum Current Transfer Ratio (IF = 10mA, VCE = |
NTE |
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NTE3085 | Optoisolator NTE3085 Optoisolator Photon Coupled Bilateral Analog FET
Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electric |
NTE |
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