डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE299 | Silicon NPN Transistor NTE299 Silicon NPN Transistor RF Power Amp, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
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NTE2990 | P-Channel MOSFET NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch TO220 Full Pack
Features: D Low Drain−Source On−Resistance D Low Input Capacitance D High Avalanche Capability Ratings Applications: D Switchi |
NTE |
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NTE2991 | N-Channel MOSFET NTE2991 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanch |
NTE |
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NTE2992 | N-Channel MOSFET NTE2992 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
Features: D 4V Gate Drive D Low Drain−Source On−Resistance D High Forward Transfer Admittance D Low Leakage Cu |
NTE |
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NTE2993 | N-Channel MOSFET NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3 Type Package
D
Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling
G S
Absolu |
NTE |
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NTE2994 | N-Channel MOSFET NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
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NTE2995 | N-Channel MOSFET NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch
Features: D RDS(on) = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applica |
NTE |
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