डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE298 | Silicon Complementary Transistors NTE297 (NPN) & NTE298 (PNP) Silicon Complementary Transistors
Audio Amplifier, Driver
Features: D High Collector–Emitter Voltage D Ideal for 25 – 30W Low–Frequency Output Drive
Absolute Maximum Ratings: |
NTE |
|
NTE2980 | Logic Level MOSFET NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package
Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D Fast Switching D T |
NTE |
|
NTE2981 | N-Channel MOSFET NTE2981 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package
Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS(on) Specified at VGS = |
NTE |
|
NTE2984 | N-Channel MOSFET NTE2984 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D +1755C Operating T |
NTE |
|
NTE2985 | N-Channel MOSFET NTE2985 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D +1755C Operating T |
NTE |
|
NTE2986 | Logic Level MOSFET NTE2986 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D +1755C Operating T |
NTE |
|
NTE2987 | N-Channel MOSFET NTE2987 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS(on) = 0.09 Typ. at VGS = 5V D +175C Op |
NTE |
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