डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE295 | Silicon NPN Transistor RF Power Output / Driver NTE295 Silicon NPN Transistor RF Power Output, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
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NTE2950 | N-Channel MOSFET NTE2950 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−262 Type Package
Features: D Low RDSON Reduces Losses D Low Gate Charge Improves the Switching Performance D Improved Diode Recovery Improves |
NTE |
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NTE2951 | N-Channel MOSFET NTE2951 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−247 Type Package
Features: D High Speed Switching D No Secondary Breakdown D Avalanche−Proof D Low ON−Resistance D Low Driving Power
Appl |
NTE |
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NTE2953 | N-Channel MOSFET NTE2953 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
D
Applications: D AC−to−DC Power Supply Equipment D Motor Control D Server Power Supplies D Synchronous Recti |
NTE |
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NTE2954 | N-Channel MOSFET NTE2954 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avala |
NTE |
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NTE2955 | N-Channel MOSFET NTE2955 MOSFET N−Channel, Enhancement Mode High Speed Switch
Application: D CS Switch for CRT Display Monitor
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain−Source Voltage (VGS = |
NTE |
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NTE2956 | N-Channel MOSFET NTE2956 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
Features: D RDS(on) = 380mW Max @ VGS = 10V, ID = 8A D Low Gate Charge: 32nC Typ D Low CRSS: 20pF Typ D 100% Avala |
NTE |
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