NTE292 डाटा शीट PDF( Datasheet )

NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a

NTE2920 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3P Type Package D Features: D Drain Current: ID = 70A at TC = +25C D Drain Source Voltage: VDSS = 60V Min D Static Drain−Source On−Resistance

NTE2921 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling

NTE2922 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3P Type Package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling

NTE2923 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling

NTE2924 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling

NTE2925 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 1.35 Typ. D High Forward Transfer Admittance: |Yfs| = 5.