NTE291 डाटा शीट PDF( Datasheet )

NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a

NTE2910 N−Channel Field Effect Transistor Switch, TO18 Type Package Features: D Fast Switching, tON ≤ 15ns Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified) Maximum Gate−to−Dra

NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhan

NTE2912 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Advanced Process technology D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fas

NTE2913 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D D Advanced Process Technology D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D F

NTE2914 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220FM Type Package Features: D Low On−Resistance: RDS = 0.026W Typ. D High Speed Switching D 4V Gate Drive Device can be Driven from 5V Source

NTE2915 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Low Gate−to−Drain Charge to Reduce Switching Losses D Fully Characterized to Simplify Design Capacitance I