NTE266 डाटा शीट PDF( Datasheet )

NTE266 Silicon NPN Transistor Darlington Power Amplifier Features: D Forward Current Transfer Ratio: hFE = 40,000 Min D Power Dissipation: 1.33W Free–Air @ TA = +50°C D Hard Solder Mountdown Applications: D

NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV Features: D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max Absolute Maximum

www.DataSheet4U.com NTE2662 Silicon NPN Transistor High Frequency, Low Noise RF Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for oscillator applicatio

www.DataSheet4U.com NTE2665 Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV Features: D High Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max D High S

www.DataSheet4U.com NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Curren

www.DataSheet4U.com NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Curren

www.DataSheet4U.com NTE2668 Silicon NPN Transistor High Current Switching Features: D Adoption of FBET, MBIT process D Large Current Capacitance D Low Collector-To-Emitter Saturation Voltage D High Speed Switc