NTE26 डाटा शीट PDF( Datasheet )

NTE26 Silicon NPN Transistor Low Noise Audio Amplifier Features: D VCEO = 120V (Min) D Low Noise: = 1dB (Typ), 10dB (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Volt

NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type pac

NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type pac

NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type pac

NTE2631 Integrated Circuit Quad Differential Line Driver Functional Description: The NTE2631 is a quad differential line driver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type

NTE2632 Integrated Circuit Quad Differential Line Receiver Functional Description: The NTE2632 is a quad line receiver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package

NTE2633 (NPN) & NTE2634 (PNP) Silicon Complementary Transistors High Frequency Video Driver Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type packag