NTE236 डाटा शीट PDF( Datasheet )

NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio appl

NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors Features: D Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ) D Small–Sized Package (TO92 type) Ap

NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier

NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier

NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D

NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies

NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: (TA = +25°C u