NTE16 डाटा शीट PDF( Datasheet )

NTE16 (NPN) & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise Absolute Maximum Ratings: (TA =

NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Ab

NTE16000–ECG thru NTE16022–ECG Polymeric Positive Temperature Coefficient (PTC) Resettable Fuses ELECTRICAL CHARACTERISTICS IHold NTE Type No. 16000–ECG 16001–ECG 16002–ECG 16003–ECG 16004–ECG 160

NTE16001 Silicon NPN Transistor Video IF Amp Features: D High Transistion Frequency D Good Linearity of DC Current Gain D An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly Mo

NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with

NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . .