NTE108 डाटा शीट PDF( Datasheet )

NTE108 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non

NTE1080 Integrated Circuit TV Video Processor Features: D For Reverse AGC D Sufficient Gain and Quieting Sensitivity D Stable Gain Over the Wide Band D Small Wave Distortion with AGC Absolute Maximum Ratings: (

www.DataSheet4U.com NTE1083 Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, VCC . . . . . . . . . . . . . . . . .

NTE1085 Integrated Circuit Low Noise Audio Preamp Features: D Low Noise: VNI = 0.8µVrms(Typ) D High Open Loop Voltage Gain: GVO = 92dB (Typ) D Low Distortion: THD = 0.1% (Max) at VOUT = 7Vrms, GV = 40dB, f= 1k

NTE1087 Integrated Circuit Low Noise Preamp Description: D General–Purpose Pre–Amplifier D Voltage Amplifier Application D Low Noise D Operates from a Wide Range of Power Supplies D High Voltage Gain Absolu