NTD25 डाटा शीट PDF( Datasheet )

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o

MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 250 mW, 13 A NTD250N65S3H Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizi

NTD25P03L, STD25P03L MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes.